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pdf Filling-Factor-Dependent Magnetophonon Resonance in Graphene

Goerbig M. O., Fuchs J. -N., Kechedzhi K., Fal'ko Vladimir I.
02 Apr 2007 cond-mat.mes-hall arxiv.org/abs/0704.0027
Abstract. We describe a peculiar fine structure acquired by the in-plane optical phonon at the Gamma-point in graphene when it is brought into resonance with one of the inter-Landau-level transitions in this material. The effect is most pronounced when this lattice mode (associated with the G-band in graphene Raman spectrum) is in resonance with inter-Landau-level transitions 0 -> (+,1) and (-,1) -> 0, at a magnetic field B_0 ~ 30 T. It can be used to measure the strength of the electron-phonon coupling directly, and its filling-factor dependence can be used experimentally to detect circularly polarized lattice modes.

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