diophantus

Log in | Create account
Hello, this is beta version of diophantus. If you want to report about a mistake, please, write to hello@diophantus.org

pdf Strained single-crystal Al2O3 grown layer-by-layer on Nb (110) thin films

Welander Paul B., Eckstein James N.
02 Apr 2007 cond-mat.supr-con, cond-mat.mtrl-sci arxiv.org/abs/0704.0118
Abstract. We report on the layer-by-layer growth of single-crystal Al2O3 thin-films on Nb (110). Single-crystal Nb films are first prepared on A-plane sapphire, followed by the evaporation of Al in an O2 background. The first stages of Al2O3 growth are layer-by-layer with hexagonal symmetry. Electron and x-ray diffraction measurements indicate the Al2O3 initially grows clamped to the Nb lattice with a tensile strain near 10%. This strain relaxes with further deposition, and beyond about 5 nm we observe the onset of island growth. Despite the asymmetric misfit between the Al2O3 film and the Nb under-layer, the observed strain is surprisingly isotropic.

Reviews

There are no reviews yet.


Comments

There are no comments yet.

Log in to leave a comment.


Reviews

There are no reviews yet.

Log in to leave a review.